Intel granted patent for Germanium Nanowire Transistors

Submitted as a patent application in April of 2010, the company first discussed a related invention at the 2010 International Electron Devices Meeting. Intel disclosed that it had developed P-channel transistors made from germanium, which the company said could be combined with complementary III-V N-channel transistors to form a suitable CMOS architecture. The focus on germanium is largely due to the fact that it is more mobile than silicon.

2DayBlog.com, Intel granted patent for Germanium Nanowire Transistors